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XP151A12A2MR-G
ETR1118_003
Power MOSFET
■ GENERAL DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible .
■ APPLICATIONS
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems
■ FEATURES
Low On-State Resistance : Rds(on) = 0.1 Ω @ Vgs = 4.5V
: Rds(on) = 0.16 Ω @ Vgs = 2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■ PIN CONFIGURATION/
MARKING
■ PRODUCT NAMES
PRODUCTS
PACKAGE
ORDER UNIT
1 1 2 x
G ： Gate
XP151A12A2MR
SOT-23
3,000/Reel
S ： Source
XP151A12A2MR-G
(*)
SOT-23
3,000/Reel
D ： Drain
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■ EQUIVALENT CIRCUIT
■ ABSOLUTE MAXIMUM RATINGS
Ta = 25 ℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
± 12
1
4
1
0.5
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
1/5
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